All MOSFET. SPP07N60C3 Datasheet

 

SPP07N60C3 Datasheet and Replacement


   Type Designator: SPP07N60C3
   Marking Code: 07N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220
 

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SPP07N60C3 Datasheet (PDF)

 ..1. Size:702K  infineon
 spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPP07N60C3

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 ..2. Size:620K  infineon
 spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf pdf_icon

SPP07N60C3

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 ..3. Size:248K  inchange semiconductor
 spp07n60c3.pdf pdf_icon

SPP07N60C3

isc N-Channel MOSFET Transistor SPP07N60C3ISPP07N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA

 5.1. Size:568K  infineon
 spp07n60cfd.pdf pdf_icon

SPP07N60C3

SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:

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Datasheet: SPP03N60C3 , SPP03N60S5 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , SPP06N60C3 , SPP06N80C3 , 8205A , SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH , SPP11N60C3 , SPP11N60CFD .

Keywords - SPP07N60C3 MOSFET datasheet

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