SPP08N80C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP08N80C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 46 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SPP08N80C3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SPP08N80C3 datasheet

 ..1. Size:488K  infineon
 spp08n80c3.pdf pdf_icon

SPP08N80C3

SPP08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..2. Size:248K  inchange semiconductor
 spp08n80c3.pdf pdf_icon

SPP08N80C3

isc N-Channel MOSFET Transistor SPP08N80C3 ISPP08N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS

 8.1. Size:726K  infineon
 spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf pdf_icon

SPP08N80C3

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 8.2. Size:248K  inchange semiconductor
 spp08n50c3.pdf pdf_icon

SPP08N80C3

isc N-Channel MOSFET Transistor SPP08N50C3 ISPP08N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM R

MOSTRAR MÁS

Otros transistores... SPP04N80C3, SPP06N60C3, SPP06N80C3, SPP07N60C3, SPP07N60CFD, SPP07N60S5, SPP07N65C3, SPP08N50C3, 13N50, SPP08P06PH, SPP11N60C3, SPP11N60CFD, SPP11N60S5, SPP11N65C3, SPP11N80C3, SPP12N50C3, SPP15N60C3