All MOSFET. SPP08N80C3 Datasheet

 

SPP08N80C3 Datasheet and Replacement


   Type Designator: SPP08N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220
 

 SPP08N80C3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPP08N80C3 Datasheet (PDF)

 ..1. Size:488K  infineon
spp08n80c3.pdf pdf_icon

SPP08N80C3

SPP08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..2. Size:248K  inchange semiconductor
spp08n80c3.pdf pdf_icon

SPP08N80C3

isc N-Channel MOSFET Transistor SPP08N80C3ISPP08N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.65Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS

 8.1. Size:726K  infineon
spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf pdf_icon

SPP08N80C3

SPP08N50C3, SPI08N50C3SPA08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 8.2. Size:248K  inchange semiconductor
spp08n50c3.pdf pdf_icon

SPP08N80C3

isc N-Channel MOSFET Transistor SPP08N50C3ISPP08N50C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM R

Datasheet: SPP04N80C3 , SPP06N60C3 , SPP06N80C3 , SPP07N60C3 , SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , TK10A60D , SPP08P06PH , SPP11N60C3 , SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , SPP15N60C3 .

History: 25N10G-TM3-T | APT4080BN

Keywords - SPP08N80C3 MOSFET datasheet

 SPP08N80C3 cross reference
 SPP08N80C3 equivalent finder
 SPP08N80C3 lookup
 SPP08N80C3 substitution
 SPP08N80C3 replacement

 

 
Back to Top

 


 
.