SPP11N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP11N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SPP11N60C3 MOSFET
SPP11N60C3 Datasheet (PDF)
spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
spp11n60c3.pdf

isc N-Channel MOSFET Transistor SPP11N60C3ISPP11N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA
spp11n60cfd.pdf

SPP11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Package Ordering Cde MarkingSPP11N60CF
Otros transistores... SPP06N80C3 , SPP07N60C3 , SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH , 4N60 , SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 .
History: SPI20N60CFD | TK14A65W5 | 2SK2049 | MSF5N50 | PF610HV | AP6941GMT-HF | VBJ1695
History: SPI20N60CFD | TK14A65W5 | 2SK2049 | MSF5N50 | PF610HV | AP6941GMT-HF | VBJ1695



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