SPP11N60C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP11N60C3
Marking Code: 11N60C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO220
SPP11N60C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP11N60C3
Datasheet (PDF)
..1. Size:678K infineon
spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf 
SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
..2. Size:654K infineon
spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf
SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
..3. Size:247K inchange semiconductor
spp11n60c3.pdf
isc N-Channel MOSFET Transistor SPP11N60C3ISPP11N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA
5.1. Size:641K infineon
spp11n60cfd.pdf
SPP11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Package Ordering Cde MarkingSPP11N60CF
5.2. Size:247K inchange semiconductor
spp11n60cfd.pdf
isc N-Channel MOSFET Transistor SPP11N60CFDISPP11N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.44Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)
6.1. Size:472K infineon
spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf
SPP11N60S5SPI11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking11N60S5SPP11N60
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