SPP11N60S5 Todos los transistores

 ..1. Size:472K  infineon
 spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf

SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60

 6.1. Size:641K  infineon
 spp11n60cfd.pdf

SPP11N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Package Ordering C de Marking SPP11N60CF

 6.2. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2

 6.3. Size:654K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2

 6.4. Size:247K  inchange semiconductor
 spp11n60cfd.pdf

isc N-Channel MOSFET Transistor SPP11N60CFD ISPP11N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.44 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )

 6.5. Size:247K  inchange semiconductor
 spp11n60c3.pdf

isc N-Channel MOSFET Transistor SPP11N60C3 ISPP11N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MA