All MOSFET. SPP11N60S5 Datasheet

 

SPP11N60S5 Datasheet and Replacement


   Type Designator: SPP11N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220
 

 SPP11N60S5 substitution

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SPP11N60S5 Datasheet (PDF)

 ..1. Size:472K  infineon
spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf pdf_icon

SPP11N60S5

SPP11N60S5SPI11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking11N60S5SPP11N60

 6.1. Size:641K  infineon
spp11n60cfd.pdf pdf_icon

SPP11N60S5

SPP11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Package Ordering Cde MarkingSPP11N60CF

 6.2. Size:678K  infineon
spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPP11N60S5

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 6.3. Size:654K  infineon
spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

SPP11N60S5

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

Datasheet: SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH , SPP11N60C3 , SPP11N60CFD , IRF530 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH .

History: PHD82NQ03LT | 2SK1446 | BSC084P03NS3G | BUK9624-55A | SVF2N60CNF

Keywords - SPP11N60S5 MOSFET datasheet

 SPP11N60S5 cross reference
 SPP11N60S5 equivalent finder
 SPP11N60S5 lookup
 SPP11N60S5 substitution
 SPP11N60S5 replacement

 

 
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