BF545A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF545A
Tipo de FET: FET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.0065 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 0.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
BF545A Datasheet (PDF)
bf545a.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)
bf545a bf545b bf545c 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)
bf545a bf545b bf545c.pdf

BF545A; BF545B; BF545CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2
mmbf5457lt1rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorNChannel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value Unit CASE 31808, STYLE 10SOT23 (TO236AB)DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcGate Current IG 10
Otros transistores... BF410A , BF410B , BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , 18N50 , BF545B , BF545C , BF556A , BF556B , BF556C , BF805 , BF861A , BF861B .
History: FDP52N20 | HM12N20D | P06P03LDG | HUFA76423S3ST | NCE65TF099F
History: FDP52N20 | HM12N20D | P06P03LDG | HUFA76423S3ST | NCE65TF099F



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