SPP15N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP15N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 540 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de SPP15N60C3 MOSFET
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SPP15N60C3 datasheet
spp15n60c3 spi15n60c3 spa15n60c3.pdf
SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf
SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
spp15n60c3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP15N60C3 FEATURES Ultra low effective capacitances Low gate charge Improved transconductance Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
spp15n60cfd.pdf
SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo
Otros transistores... SPP08N80C3, SPP08P06PH, SPP11N60C3, SPP11N60CFD, SPP11N60S5, SPP11N65C3, SPP11N80C3, SPP12N50C3, CS150N03A8, SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3
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