SPP15N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP15N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO220

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SPP15N60C3 datasheet

 ..1. Size:700K  infineon
spp15n60c3 spi15n60c3 spa15n60c3.pdf pdf_icon

SPP15N60C3

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 ..2. Size:684K  infineon
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf pdf_icon

SPP15N60C3

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 ..3. Size:205K  inchange semiconductor
spp15n60c3.pdf pdf_icon

SPP15N60C3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP15N60C3 FEATURES Ultra low effective capacitances Low gate charge Improved transconductance Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 5.1. Size:537K  infineon
spp15n60cfd.pdf pdf_icon

SPP15N60C3

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo

Otros transistores... SPP08N80C3, SPP08P06PH, SPP11N60C3, SPP11N60CFD, SPP11N60S5, SPP11N65C3, SPP11N80C3, SPP12N50C3, CS150N03A8, SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3