All MOSFET. SPP15N60C3 Datasheet

 

SPP15N60C3 Datasheet and Replacement


   Type Designator: SPP15N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220
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SPP15N60C3 Datasheet (PDF)

 ..1. Size:700K  infineon
spp15n60c3 spi15n60c3 spa15n60c3.pdf pdf_icon

SPP15N60C3

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 ..2. Size:684K  infineon
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf pdf_icon

SPP15N60C3

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 ..3. Size:205K  inchange semiconductor
spp15n60c3.pdf pdf_icon

SPP15N60C3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPP15N60C3FEATURESUltra low effective capacitancesLow gate chargeImproved transconductanceLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 5.1. Size:537K  infineon
spp15n60cfd.pdf pdf_icon

SPP15N60C3

SPP15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330 DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed fo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - SPP15N60C3 MOSFET datasheet

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