SPP15N65C3 Todos los transistores

 ..1. Size:253K  infineon
 spp15n65c3.pdf

SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for Notebook Adapter Type Package Marking SPP15N65C3

 7.1. Size:700K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3.pdf

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 7.2. Size:537K  infineon
 spp15n60cfd.pdf

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo

 7.3. Size:684K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 7.4. Size:247K  inchange semiconductor
 spp15n60cfd.pdf

isc N-Channel MOSFET Transistor SPP15N60CFD ISPP15N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 7.5. Size:205K  inchange semiconductor
 spp15n60c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP15N60C3 FEATURES Ultra low effective capacitances Low gate charge Improved transconductance Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA