SPP15N65C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP15N65C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 540 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SPP15N65C3 MOSFET
SPP15N65C3 Datasheet (PDF)
spp15n65c3.pdf

SPP15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-1CoolMOS C3 designed for: Notebook AdapterType Package MarkingSPP15N65C3
spp15n60c3 spi15n60c3 spa15n60c3.pdf

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
spp15n60cfd.pdf

SPP15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330 DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed fo
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
Otros transistores... SPP11N60C3 , SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , IRFP250 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , SPP17N80C3 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 .
History: LSB55R050GT | HM10P10D
History: LSB55R050GT | HM10P10D



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