BF545B Todos los transistores

 ..1. Size:69K  philips
 bf545a bf545b bf545c 2.pdf

 ..2. Size:71K  philips
 bf545a bf545b bf545c.pdf

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2

 9.1. Size:103K  motorola
 mmbf5457lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor N Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Reverse Gate Source Voltage VGS(r) 25 Vdc Gate Current IG 10

 9.2. Size:100K  philips
 bf545a.pdf

 9.3. Size:129K  fairchild semi
 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 9.4. Size:55K  onsemi
 mmbf5457lt1-d.pdf

MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http //onsemi.com Features Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Charac