All MOSFET. BF545B Datasheet

 

BF545B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BF545B
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.25 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Drain Current |Id|: 0.015 A
   Maximum Junction Temperature (Tj): 150 °C
   Drain-Source Capacitance (Cd): 0.8 pF
   Maximum Drain-Source On-State Resistance (Rds): 300 Ohm
   Package: SOT23

 BF545B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF545B Datasheet (PDF)

 ..1. Size:69K  philips
bf545a bf545b bf545c 2.pdf

BF545B
BF545B

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

 ..2. Size:71K  philips
bf545a bf545b bf545c.pdf

BF545B
BF545B

BF545A; BF545B; BF545CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2

 9.1. Size:103K  motorola
mmbf5457lt1rev0d.pdf

BF545B
BF545B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorN Channel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating S

 9.2. Size:100K  philips
bf545a.pdf

BF545B
BF545B

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

 9.3. Size:129K  fairchild semi
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

BF545B
BF545B

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

 9.4. Size:55K  onsemi
mmbf5457lt1-d.pdf

BF545B
BF545B

MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac

Datasheet: BF410B , BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , 5N60 , BF545C , BF556A , BF556B , BF556C , BF805 , BF861A , BF861B , BF861C .

 

 
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