BF545B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BF545B
Marking Code: M66
Type of Transistor: FET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 0.015
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 300
Ohm
Package:
SOT23
BF545B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF545B
Datasheet (PDF)
..1. Size:69K philips
bf545a bf545b bf545c 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)
..2. Size:71K philips
bf545a bf545b bf545c.pdf
BF545A; BF545B; BF545CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2
9.1. Size:103K motorola
mmbf5457lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorNChannel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value Unit CASE 31808, STYLE 10SOT23 (TO236AB)DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcGate Current IG 10
9.2. Size:100K philips
bf545a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)
9.3. Size:129K fairchild semi
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf
2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS
9.4. Size:55K onsemi
mmbf5457lt1-d.pdf
MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac
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