SPP24N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPP24N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220

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SPP24N60C3 Datasheet (PDF)

..1. Size:345K infineon
spp24n60c3.pdf

SPP24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Worldwide best RDS(on) in TO 220PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPP24N60C3 P

..2. Size:247K inchange semiconductor
spp24n60c3.pdf

isc N-Channel MOSFET Transistor SPP24N60C3ISPP24N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.16Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductanceABSO

5.1. Size:539K infineon
spp24n60cfd.pdf

SPP24N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.185DS(on),max Extremely low reverse recovery chargeI 21.7 AD Ultra low gate chargePG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed

5.2. Size:247K inchange semiconductor
spp24n60cfd.pdf

isc N-Channel MOSFET Transistor SPP24N60CFDISPP24N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.185Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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