SPP24N60C3. Аналоги и основные параметры

Наименование производителя: SPP24N60C3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 240 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 1000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP24N60C3

- подборⓘ MOSFET транзистора по параметрам

 

SPP24N60C3 даташит

 ..1. Size:345K  infineon
 spp24n60c3.pdf pdf_icon

SPP24N60C3

SPP24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Worldwide best RDS(on) in TO 220 PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPP24N60C3 P

 ..2. Size:247K  inchange semiconductor
 spp24n60c3.pdf pdf_icon

SPP24N60C3

isc N-Channel MOSFET Transistor SPP24N60C3 ISPP24N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSO

 5.1. Size:539K  infineon
 spp24n60cfd.pdf pdf_icon

SPP24N60C3

SPP24N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.185 DS(on),max Extremely low reverse recovery charge I 21.7 A D Ultra low gate charge PG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed

 5.2. Size:247K  inchange semiconductor
 spp24n60cfd.pdf pdf_icon

SPP24N60C3

isc N-Channel MOSFET Transistor SPP24N60CFD ISPP24N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.185 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )

ПОКАЗАТЬ ЕЩЁ

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