SPP24N60CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPP24N60CFD
   Código: 24N60CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO220

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SPP24N60CFD Datasheet (PDF)

..1. Size:539K infineon
spp24n60cfd.pdf

SPP24N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.185DS(on),max Extremely low reverse recovery chargeI 21.7 AD Ultra low gate chargePG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed

..2. Size:247K inchange semiconductor
spp24n60cfd.pdf

isc N-Channel MOSFET Transistor SPP24N60CFDISPP24N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.185Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

5.1. Size:345K infineon
spp24n60c3.pdf

SPP24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Worldwide best RDS(on) in TO 220PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPP24N60C3 P

5.2. Size:247K inchange semiconductor
spp24n60c3.pdf

isc N-Channel MOSFET Transistor SPP24N60C3ISPP24N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.16Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductanceABSO

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