SPP24N60CFD Specs and Replacement

Type Designator: SPP24N60CFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: TO220

SPP24N60CFD substitution

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SPP24N60CFD datasheet

 ..1. Size:539K  infineon
 spp24n60cfd.pdf pdf_icon

SPP24N60CFD

SPP24N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.185 DS(on),max Extremely low reverse recovery charge I 21.7 A D Ultra low gate charge PG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed... See More ⇒

 ..2. Size:247K  inchange semiconductor
 spp24n60cfd.pdf pdf_icon

SPP24N60CFD

isc N-Channel MOSFET Transistor SPP24N60CFD ISPP24N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.185 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 5.1. Size:345K  infineon
 spp24n60c3.pdf pdf_icon

SPP24N60CFD

SPP24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Worldwide best RDS(on) in TO 220 PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPP24N60C3 P... See More ⇒

 5.2. Size:247K  inchange semiconductor
 spp24n60c3.pdf pdf_icon

SPP24N60CFD

isc N-Channel MOSFET Transistor SPP24N60C3 ISPP24N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSO... See More ⇒

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Detailed specifications: SPP17N80C3, SPP18P06PH, SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, RFP50N06, SPP80P06PH, SPS01N60C3, SPS02N60C3, SPS03N60C3, SPS04N60C3, SPU01N60C3, SPU02N60C3, SPU02N60S5

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