SPP24N60CFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP24N60CFD
Marking Code: 24N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 240
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 21.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185
Ohm
Package:
TO220
SPP24N60CFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP24N60CFD
Datasheet (PDF)
..1. Size:539K infineon
spp24n60cfd.pdf
SPP24N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.185DS(on),max Extremely low reverse recovery chargeI 21.7 AD Ultra low gate chargePG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed
..2. Size:247K inchange semiconductor
spp24n60cfd.pdf
isc N-Channel MOSFET Transistor SPP24N60CFDISPP24N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.185Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)
5.1. Size:345K infineon
spp24n60c3.pdf
SPP24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Worldwide best RDS(on) in TO 220PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPP24N60C3 P
5.2. Size:247K inchange semiconductor
spp24n60c3.pdf
isc N-Channel MOSFET Transistor SPP24N60C3ISPP24N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.16Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductanceABSO
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