SPP80P06PH Todos los transistores

 

SPP80P06PH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP80P06PH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1252 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO220
 

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SPP80P06PH Datasheet (PDF)

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06PH

SPP80P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature

 ..2. Size:819K  cn vbsemi
 spp80p06ph.pdf pdf_icon

SPP80P06PH

SPP80P06PHwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

 5.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06PH

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche ratedContinuous drain current ID -80 A dv/dt rated 175C operating temperaturePin 1 PIN 2/4 PIN 3Type Package Lead freeG D SSPP80P06P G PG-TO220-3 Yes PG-TO263-3SPB80P06P G

 5.2. Size:515K  infineon
 spp80p06pg.pdf pdf_icon

SPP80P06PH

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating

MOSTRAR MÁS

Otros transistores... SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD , IRFZ46N , SPS01N60C3 , SPS02N60C3 , SPS03N60C3 , SPS04N60C3 , SPU01N60C3 , SPU02N60C3 , SPU02N60S5 , SPU03N60C3 .

History: H5N3005LS

 

 
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