SPP80P06PH Todos los transistores

 

SPP80P06PH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP80P06PH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 340 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 173 nC

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TO220

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SPP80P06PH Datasheet (PDF)

1.1. spp80p06pg.pdf Size:515K _update

SPP80P06PH
SPP80P06PH

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel • P-Channel Drain source voltage VDS -60 V • Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 • Avalanche rated Avalanche rated Continuous drain current ID -80 A • dv/dt rated dv/dt rated • 175°C operating temperature 175°C operating

1.2. spp80p06p.pdf Size:606K _update

SPP80P06PH
SPP80P06PH

SPP80P06P H SIPMOS Power-Transistor Features Product Summary P-Channel • P-Channel Drain source voltage VDS -60 V • Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 • Avalanche rated Avalanche rated Continuous drain current ID -80 A • dv/dt rated dv/dt rated • 175°C operating temperature 175°C operating temperature

 1.3. spp80p06ph rev1.5.pdf Size:606K _infineon

SPP80P06PH
SPP80P06PH

SPP80P06P H SIPMOS? Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature Pb-free lead p

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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