SPP80P06PH Todos los transistores

 

SPP80P06PH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP80P06PH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1252 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO220
 

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Principales características: SPP80P06PH

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06PH

SPP80P06P H SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating temperature

 ..2. Size:819K  cn vbsemi
 spp80p06ph.pdf pdf_icon

SPP80P06PH

SPP80P06PH www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) P

 5.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06PH

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175 C operating temperature Pin 1 PIN 2/4 PIN 3 Type Package Lead free G D S SPP80P06P G PG-TO220-3 Yes PG-TO263-3 SPB80P06P G

 5.2. Size:515K  infineon
 spp80p06pg.pdf pdf_icon

SPP80P06PH

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating

MOSTRAR MÁS

Otros transistores... SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD , SI2302 , SPS01N60C3 , SPS02N60C3 , SPS03N60C3 , SPS04N60C3 , SPU01N60C3 , SPU02N60C3 , SPU02N60S5 , SPU03N60C3 .

 

 
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