SPP80P06PH PDF and Equivalents Search

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf

SPP80P06P H SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating temperature ... See More ⇒

 ..2. Size:819K  cn vbsemi
 spp80p06ph.pdf

SPP80P06PH www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) P... See More ⇒

 5.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175 C operating temperature Pin 1 PIN 2/4 PIN 3 Type Package Lead free G D S SPP80P06P G PG-TO220-3 Yes PG-TO263-3 SPB80P06P G ... See More ⇒

 5.2. Size:515K  infineon
 spp80p06pg.pdf

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating... See More ⇒

 5.3. Size:821K  cn vbsemi
 spp80p06pg.pdf

SPP80P06PG www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) P... See More ⇒

 5.4. Size:242K  inchange semiconductor
 spp80p06p.pdf

isc P-Channel MOSFET Transistor SPP80P06P ISPP80P06P FEATURES Static drain-source on-resistance RDS(on) 0.023 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION 175 operating temperature Avalanche rated dv/dt rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒