SPU03N60S5 Todos los transistores

 

SPU03N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPU03N60S5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de SPU03N60S5 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPU03N60S5 Datasheet (PDF)

 ..1. Size:892K  infineon
spd03n60s5 spu03n60s5.pdf pdf_icon

SPU03N60S5

SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-T

 ..2. Size:261K  inchange semiconductor
spu03n60s5.pdf pdf_icon

SPU03N60S5

isc N-Channel MOSFET Transistor SPU03N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 6.1. Size:635K  infineon
spd03n60c3 spu03n60c3.pdf pdf_icon

SPU03N60S5

VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum Rat

 6.2. Size:261K  inchange semiconductor
spu03n60c3.pdf pdf_icon

SPU03N60S5

isc N-Channel MOSFET Transistor SPU03N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Otros transistores... SPS01N60C3 , SPS02N60C3 , SPS03N60C3 , SPS04N60C3 , SPU01N60C3 , SPU02N60C3 , SPU02N60S5 , SPU03N60C3 , K2611 , SPU04N60C3 , SPU04N60S5 , SPU07N60C3 , SPU07N60S5 , SPW07N60CFD , SPW11N60C3 , SPW11N60CFD , SPW11N60S5 .

History: GSM4953S | AP05N50EI-HF | HAT1097RJ

 

 
Back to Top

 


 
.