SPU03N60S5. Аналоги и основные параметры

Наименование производителя: SPU03N60S5

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO251

Аналог (замена) для SPU03N60S5

- подборⓘ MOSFET транзистора по параметрам

 

SPU03N60S5 даташит

 ..1. Size:892K  infineon
 spd03n60s5 spu03n60s5.pdf pdf_icon

SPU03N60S5

SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 1.4 New revolutionary high voltage technology ID 3.2 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 Ultra low effective capacitances 3 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 03N60S5 SPU03N60S5 PG-T

 ..2. Size:261K  inchange semiconductor
 spu03n60s5.pdf pdf_icon

SPU03N60S5

isc N-Channel MOSFET Transistor SPU03N60S5 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 6.1. Size:635K  infineon
 spd03n60c3 spu03n60c3.pdf pdf_icon

SPU03N60S5

VDS Tjmax 650 V jmax Feature 1.4 DS(on) New revolutionary high voltage technology .2 A D Ultra low gate charge PG TO251 PG TO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering C de Marking SPD0 N60C PG TO252 Q67040 S4421 0 N60C SPU0 N60C PG TO251 0 N60C Maximum Rat

 6.2. Size:261K  inchange semiconductor
 spu03n60c3.pdf pdf_icon

SPU03N60S5

isc N-Channel MOSFET Transistor SPU03N60C3 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SPS01N60C3, SPS02N60C3, SPS03N60C3, SPS04N60C3, SPU01N60C3, SPU02N60C3, SPU02N60S5, SPU03N60C3, 8N60, SPU04N60C3, SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3, SPW11N60CFD, SPW11N60S5