BF556A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF556A

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.007 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 0.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm

Encapsulados: SOT23

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BF556A datasheet

 ..1. Size:68K  philips
 bf556a bf556b bf556c 2.pdf pdf_icon

BF556A

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha

 ..2. Size:100K  philips
 bf556a.pdf pdf_icon

BF556A

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha

 ..3. Size:71K  philips
 bf556a bf556b bf556c.pdf pdf_icon

BF556A

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2

Otros transistores... BF410D, BF510, BF511, BF512, BF513, BF545A, BF545B, BF545C, IRFB3607, BF556B, BF556C, BF805, BF861A, BF861B, BF861C, BF862, BF900