BF556A MOSFET. Datasheet pdf. Equivalent
Type Designator: BF556A
Marking Code: M84
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.007 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 0.8 pF
Maximum Drain-Source On-State Resistance (Rds): 1000 Ohm
Package: SOT23
BF556A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF556A Datasheet (PDF)
bf556a bf556b bf556c 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha
bf556a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha
bf556a bf556b bf556c.pdf
BF556A; BF556B; BF556CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2
Datasheet: BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , 13N50 , BF556B , BF556C , BF805 , BF861A , BF861B , BF861C , BF862 , BF900 .
