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BF556A Specs and Replacement


   Type Designator: BF556A
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.007 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: SOT23
 

 BF556A substitution

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BF556A Specs

 ..1. Size:68K  philips
 bf556a bf556b bf556c 2.pdf pdf_icon

BF556A

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha... See More ⇒

 ..2. Size:100K  philips
 bf556a.pdf pdf_icon

BF556A

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha... See More ⇒

 ..3. Size:71K  philips
 bf556a bf556b bf556c.pdf pdf_icon

BF556A

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 ... See More ⇒

Detailed specifications: BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , IRFB3607 , BF556B , BF556C , BF805 , BF861A , BF861B , BF861C , BF862 , BF900 .

Keywords - BF556A MOSFET specs

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