SPW11N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW11N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de SPW11N60C3 MOSFET
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SPW11N60C3 datasheet
spw11n60c3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60C3 ISPW11N60C3 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
spw11n60cfd.pdf
SPW11N60CFD C I MOS P wer TransIst r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade
spw11n60cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60CFD ISPW11N60CFD FEATURES Static drain-source on-resistance RDS(on) 440m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... SPU02N60S5, SPU03N60C3, SPU03N60S5, SPU04N60C3, SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, IRF1405, SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3
History: TPA70R260M | TPA70R450C
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