SPW11N80C3 Todos los transistores

 ..1. Size:506K  infineon
 spw11n80c3.pdf

SPW11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.45 DS(on)max Extreme dv/dt rated Q 64 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low ef

 ..2. Size:243K  inchange semiconductor
 spw11n80c3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N80C3 ISPW11N80C3 FEATURES Static drain-source on-resistance RDS(on) 450m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 8.1. Size:1394K  infineon
 spw11n60cfd.pdf

SPW11N60CFD C I MOS P wer TransIst r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade

 8.2. Size:790K  infineon
 spw11n60c3.pdf

VDS Tjmax G G

 8.3. Size:918K  infineon
 spw11n60s5.pdf

SPW11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 Maximum Ratings Para

 8.4. Size:243K  inchange semiconductor
 spw11n60cfd.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60CFD ISPW11N60CFD FEATURES Static drain-source on-resistance RDS(on) 440m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.5. Size:243K  inchange semiconductor
 spw11n60c3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60C3 ISPW11N60C3 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.6. Size:242K  inchange semiconductor
 spw11n60s5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60S5 ISPW11N60S5 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT