All MOSFET. SPW11N80C3 Datasheet

 

SPW11N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPW11N80C3
   Marking Code: 11N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 156 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 11 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 64 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 65 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
   Package: TO247

 SPW11N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPW11N80C3 Datasheet (PDF)

 ..1. Size:506K  infineon
spw11n80c3.pdf

SPW11N80C3
SPW11N80C3

SPW11N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.45DS(on)max Extreme dv/dt ratedQ 64 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low ef

 ..2. Size:243K  inchange semiconductor
spw11n80c3.pdf

SPW11N80C3
SPW11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N80C3ISPW11N80C3FEATURESStatic drain-source on-resistance:RDS(on)450mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 8.1. Size:1394K  infineon
spw11n60cfd.pdf

SPW11N80C3
SPW11N80C3

SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade

 8.2. Size:790K  infineon
spw11n60c3.pdf

SPW11N80C3
SPW11N80C3

VDS Tjmax G G

 8.3. Size:918K  infineon
spw11n60s5.pdf

SPW11N80C3
SPW11N80C3

SPW11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW11N60S5 PG-TO247 Q67040-S4239 11N60S5Maximum RatingsPara

 8.4. Size:243K  inchange semiconductor
spw11n60cfd.pdf

SPW11N80C3
SPW11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60CFDISPW11N60CFDFEATURESStatic drain-source on-resistance:RDS(on)440mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.5. Size:243K  inchange semiconductor
spw11n60c3.pdf

SPW11N80C3
SPW11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60C3ISPW11N60C3FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 8.6. Size:242K  inchange semiconductor
spw11n60s5.pdf

SPW11N80C3
SPW11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60S5ISPW11N60S5FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top