SPW11N80C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPW11N80C3
Marking Code: 11N80C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 64
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
TO247
SPW11N80C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPW11N80C3
Datasheet (PDF)
..1. Size:506K infineon
spw11n80c3.pdf 
SPW11N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.45DS(on)max Extreme dv/dt ratedQ 64 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low ef
..2. Size:243K inchange semiconductor
spw11n80c3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N80C3ISPW11N80C3FEATURESStatic drain-source on-resistance:RDS(on)450mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
8.1. Size:1394K infineon
spw11n60cfd.pdf
SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade
8.3. Size:918K infineon
spw11n60s5.pdf
SPW11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW11N60S5 PG-TO247 Q67040-S4239 11N60S5Maximum RatingsPara
8.4. Size:243K inchange semiconductor
spw11n60cfd.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60CFDISPW11N60CFDFEATURESStatic drain-source on-resistance:RDS(on)440mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.5. Size:243K inchange semiconductor
spw11n60c3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60C3ISPW11N60C3FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
8.6. Size:242K inchange semiconductor
spw11n60s5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60S5ISPW11N60S5FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
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