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SPW11N80C3 Datasheet and Replacement


   Type Designator: SPW11N80C3
   Marking Code: 11N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO247
 

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SPW11N80C3 Datasheet (PDF)

 ..1. Size:506K  infineon
 spw11n80c3.pdf pdf_icon

SPW11N80C3

SPW11N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.45DS(on)max Extreme dv/dt ratedQ 64 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low ef

 ..2. Size:243K  inchange semiconductor
 spw11n80c3.pdf pdf_icon

SPW11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N80C3ISPW11N80C3FEATURESStatic drain-source on-resistance:RDS(on)450mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 8.1. Size:1394K  infineon
 spw11n60cfd.pdf pdf_icon

SPW11N80C3

SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade

 8.2. Size:790K  infineon
 spw11n60c3.pdf pdf_icon

SPW11N80C3

VDS Tjmax G G

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Keywords - SPW11N80C3 MOSFET datasheet

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