SPW15N60CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPW15N60CFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

Encapsulados: TO247

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SPW15N60CFD datasheet

 ..1. Size:700K  infineon
 spw15n60cfd.pdf pdf_icon

SPW15N60CFD

SPW15N60CFD TM C IMOSTM # A0D9 R 0. 0 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC

 ..2. Size:243K  inchange semiconductor
 spw15n60cfd.pdf pdf_icon

SPW15N60CFD

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW15N60CFD ISPW15N60CFD FEATURES Static drain-source on-resistance RDS(on) 330m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 5.1. Size:743K  infineon
 spw15n60c3.pdf pdf_icon

SPW15N60CFD

VDS Tjmax G G

 5.2. Size:244K  inchange semiconductor
 spw15n60c3.pdf pdf_icon

SPW15N60CFD

isc N-Channel MOSFET Transistor SPW15N60C3 ISPW15N60C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6

MOSTRAR MÁS

Otros transistores... SPU07N60S5, SPW07N60CFD, SPW11N60C3, SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, IRF9640, SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD