All MOSFET. SPW15N60CFD Datasheet

 

SPW15N60CFD Datasheet and Replacement


   Type Designator: SPW15N60CFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO247
 

 SPW15N60CFD substitution

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SPW15N60CFD Datasheet (PDF)

 ..1. Size:700K  infineon
 spw15n60cfd.pdf pdf_icon

SPW15N60CFD

SPW15N60CFDTMCIMOSTM #:A0D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC

 ..2. Size:243K  inchange semiconductor
 spw15n60cfd.pdf pdf_icon

SPW15N60CFD

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW15N60CFDISPW15N60CFDFEATURESStatic drain-source on-resistance:RDS(on)330mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 5.1. Size:743K  infineon
 spw15n60c3.pdf pdf_icon

SPW15N60CFD

VDS Tjmax G G

 5.2. Size:244K  inchange semiconductor
 spw15n60c3.pdf pdf_icon

SPW15N60CFD

isc N-Channel MOSFET Transistor SPW15N60C3ISPW15N60C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6

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Datasheet: SPU07N60S5 , SPW07N60CFD , SPW11N60C3 , SPW11N60CFD , SPW11N60S5 , SPW11N80C3 , SPW12N50C3 , SPW15N60C3 , IRF9640 , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 , SPW24N60CFD .

History: APT4012BVR | PP9H06BD

Keywords - SPW15N60CFD MOSFET datasheet

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