SPW20N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW20N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 780 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de SPW20N60C3 MOSFET
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SPW20N60C3 datasheet
spw20n60c3.pdf
isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
spw20n60cfd.pdf
Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package
spw20n60cfd.pdf
isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD FEATURES Static drain-source on-resistance RDS(on) 220m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
Otros transistores... SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3, K2611, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD, SPW32N50C3, SPW35N60C3, SPW35N60CFD
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