SPW20N60C3 Specs and Replacement
Type Designator: SPW20N60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 780 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO247
SPW20N60C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPW20N60C3 datasheet
spw20n60c3.pdf
isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒
spw20n60cfd.pdf
Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package... See More ⇒
spw20n60cfd.pdf
isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD FEATURES Static drain-source on-resistance RDS(on) 220m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
Detailed specifications: SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3, K2611, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD, SPW32N50C3, SPW35N60C3, SPW35N60CFD
Keywords - SPW20N60C3 MOSFET specs
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