SPW20N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPW20N60S5
   Código: 20N60S5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 79 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 1170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET SPW20N60S5

SPW20N60S5 Datasheet (PDF)

..1. Size:768K infineon
spw20n60s5.pdf

SPW20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW20N60S5 PG-TO247 Q67040-S4238 20N60S5Maximum RatingsPara

..2. Size:244K inchange semiconductor
spw20n60s5.pdf

isc N-Channel MOSFET Transistor SPW20N60S5ISPW20N60S5FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

6.1. Size:765K infineon
spw20n60c3.pdf

VDS Tjmax G G-TO247

6.2. Size:2950K infineon
spw20n60cfd.pdf

Please note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package

6.3. Size:269K inchange semiconductor
spw20n60c3.pdf

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

6.4. Size:245K inchange semiconductor
spw20n60cfd.pdf

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFDFEATURESStatic drain-source on-resistance:RDS(on)220mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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