SPW20N60S5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPW20N60S5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 1170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO247

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SPW20N60S5 datasheet

 ..1. Size:768K  infineon
spw20n60s5.pdf pdf_icon

SPW20N60S5

SPW20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 Maximum Ratings Para

 ..2. Size:244K  inchange semiconductor
spw20n60s5.pdf pdf_icon

SPW20N60S5

isc N-Channel MOSFET Transistor SPW20N60S5 ISPW20N60S5 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

 6.1. Size:765K  infineon
spw20n60c3.pdf pdf_icon

SPW20N60S5

VDS Tjmax G G-TO247

 6.2. Size:2950K  infineon
spw20n60cfd.pdf pdf_icon

SPW20N60S5

Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package

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