Справочник MOSFET. SPW20N60S5

 

SPW20N60S5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPW20N60S5
   Маркировка: 20N60S5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 79 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 1170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SPW20N60S5

 

 

SPW20N60S5 Datasheet (PDF)

 ..1. Size:768K  infineon
 spw20n60s5.pdf

SPW20N60S5 SPW20N60S5

SPW20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW20N60S5 PG-TO247 Q67040-S4238 20N60S5Maximum RatingsPara

 ..2. Size:244K  inchange semiconductor
 spw20n60s5.pdf

SPW20N60S5 SPW20N60S5

isc N-Channel MOSFET Transistor SPW20N60S5ISPW20N60S5FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

 6.1. Size:765K  infineon
 spw20n60c3.pdf

SPW20N60S5 SPW20N60S5

VDS Tjmax G G-TO247

 6.2. Size:2950K  infineon
 spw20n60cfd.pdf

SPW20N60S5 SPW20N60S5

Please note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package

 6.3. Size:269K  inchange semiconductor
 spw20n60c3.pdf

SPW20N60S5 SPW20N60S5

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 6.4. Size:245K  inchange semiconductor
 spw20n60cfd.pdf

SPW20N60S5 SPW20N60S5

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFDFEATURESStatic drain-source on-resistance:RDS(on)220mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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