SPW20N60S5 - описание и поиск аналогов

SPW20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 Maximum Ratings Para

isc N-Channel MOSFET Transistor SPW20N60S5 ISPW20N60S5 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

VDS Tjmax G G-TO247

Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package dimensions arccording to PCN 2009 1 4 A Please note the new package

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD FEATURES Static drain-source on-resistance RDS(on) 220m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt