SPW24N60CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPW24N60CFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm

Encapsulados: TO247

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SPW24N60CFD datasheet

 ..1. Size:678K  infineon
 spw24n60cfd.pdf pdf_icon

SPW24N60CFD

SPW24N60CFD TM C IMOSTM "9@/; %;+877+;B Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0.185 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC

 ..2. Size:244K  inchange semiconductor
 spw24n60cfd.pdf pdf_icon

SPW24N60CFD

isc N-Channel MOSFET Transistor SPW24N60CFD ISPW24N60CFD FEATURES Static drain-source on-resistance RDS(on) 185m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 5.1. Size:807K  infineon
 spw24n60c3.pdf pdf_icon

SPW24N60CFD

SPW24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW24N60C3 PG-TO247 Q67040-S4640 24N60C3 Maximum Rati

 5.2. Size:244K  inchange semiconductor
 spw24n60c3.pdf pdf_icon

SPW24N60CFD

isc N-Channel MOSFET Transistor SPW24N60C3 ISPW24N60C3 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

MOSTRAR MÁS

Otros transistores... SPW15N60CFD, SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, AO4407A, SPW32N50C3, SPW35N60C3, SPW35N60CFD, SPW47N60C3, SPW47N60CFD, SPW47N65C3, SPW52N50C3, IRF1010EZ