SPW24N60CFD Todos los transistores

 

SPW24N60CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPW24N60CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO247
 

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SPW24N60CFD Datasheet (PDF)

 ..1. Size:678K  infineon
spw24n60cfd.pdf pdf_icon

SPW24N60CFD

SPW24N60CFDTMCIMOSTM "9@/; %;+877+;BFeaturesV 1?B6M 650 V!0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0.185DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC

 ..2. Size:244K  inchange semiconductor
spw24n60cfd.pdf pdf_icon

SPW24N60CFD

isc N-Channel MOSFET Transistor SPW24N60CFDISPW24N60CFDFEATURESStatic drain-source on-resistance:RDS(on)185mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 5.1. Size:807K  infineon
spw24n60c3.pdf pdf_icon

SPW24N60CFD

SPW24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW24N60C3 PG-TO247 Q67040-S4640 24N60C3Maximum Rati

 5.2. Size:244K  inchange semiconductor
spw24n60c3.pdf pdf_icon

SPW24N60CFD

isc N-Channel MOSFET Transistor SPW24N60C3ISPW24N60C3FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Otros transistores... SPW15N60CFD , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 , AO3407 , SPW32N50C3 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ .

History: AUIRF7736M2TR1 | NTD4804NA-1G | BF1202WR

 

 
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