IRF1010Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 94 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO220AB

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IRF1010Z datasheet

 ..1. Size:399K  international rectifier
 irf1010zlpbf irf1010zpbf irf1010zspbf.pdf pdf_icon

IRF1010Z

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extr

 ..2. Size:180K  international rectifier
 irf1010z.pdf pdf_icon

IRF1010Z

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 7.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 0.1. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

IRF1010Z

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S

 0.2. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

IRF1010Z

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

MOSTRAR MÁS

Otros transistores... SPW35N60CFD, SPW47N60C3, SPW47N60CFD, SPW47N65C3, SPW52N50C3, IRF1010EZ, IRF1010EZL, IRF1010EZS, IRF540, IRF1010ZL, IRF1010ZS, IRF1018E, IRF1018ES, IRF1018ESL, IRF1104L, IRF1104S, IRF1324