All MOSFET. IRF1010Z Datasheet

 

IRF1010Z MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 94 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 63 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO220AB

IRF1010Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010Z Datasheet (PDF)

1.1. irf1010zlpbf irf1010zpbf irf1010zspbf.pdf Size:399K _update

IRF1010Z
IRF1010Z

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5mΩ G Description ID = 75A This HEXFET® Power MOSFET utilizes the latest S processing techniques to achieve extr

1.2. irf1010z.pdf Size:180K _international_rectifier

IRF1010Z
IRF1010Z

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 7.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

 3.1. irf1010a irf1010h.pdf Size:606K _update

IRF1010Z
IRF1010Z

RoHS IRF1010 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (84A, 60Volts) DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability D D of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient G

3.2. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _update

IRF1010Z
IRF1010Z

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5mΩ Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing tech

 3.3. irf1010nlpbf irf1010nspbf.pdf Size:292K _update

IRF1010Z
IRF1010Z

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11mΩ l Lead-Free G Description ID = 85A‡ Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

3.4. irf1010elpbf irf1010espbf.pdf Size:222K _update

IRF1010Z
IRF1010Z

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

 3.5. irf1010npbf.pdf Size:225K _update

IRF1010Z
IRF1010Z

PD - 94966A IRF1010NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 11mΩ l Fast Switching G l Fully Avalanche Rated ID = 85A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.6. irf1010epbf.pdf Size:241K _update

IRF1010Z
IRF1010Z

PD - 94965B IRF1010EPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 12mΩ l Fast Switching G l Fully Avalanche Rated ID = 84A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.7. irf1010n.pdf Size:211K _international_rectifier

IRF1010Z
IRF1010Z

PD - 91278 IRF1010N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 11m? G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.8. irf1010e.pdf Size:195K _international_rectifier

IRF1010Z
IRF1010Z

PD - 91670 IRF1010E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.9. irf1010esl.pdf Size:196K _international_rectifier

IRF1010Z
IRF1010Z

PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

3.10. irf1010ns.pdf Size:146K _international_rectifier

IRF1010Z
IRF1010Z

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 11m? Fully Avalanche Rated G Description Advanced HEXFET Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low on-resis

3.11. irf1010es.pdf Size:123K _international_rectifier

IRF1010Z
IRF1010Z

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr

Datasheet: SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF1010EZS , IRFZ44 , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL , IRF1104L , IRF1104S , IRF1324 .

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