IRF1324 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1324
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 353 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 190 nS
Cossⓘ - Capacitancia de salida: 3440 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF1324 MOSFET
IRF1324 Datasheet (PDF)
irf1324pbf.pdf
PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness
irf1324.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1324IIRF1324FEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
auirf1324strl.pdf
PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua
irf1324s-7ppbf.pdf
PD - 97263BIRF1324S-7PPbFHEXFET Power MOSFETDApplicationsVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.0.8ml Uninterruptible Power Supply max. 1.0ml High Speed Power Switching GID (Silicon Limited)429Al Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
Otros transistores... IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL , IRF1104L , IRF1104S , IRF640N , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L , IRF1404S , IRF1404Z , IRF1404ZG , IRF1404ZL .
History: IXTP70N075T2 | IXTH20N60 | UTT120N06
History: IXTP70N075T2 | IXTH20N60 | UTT120N06
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