IRF1324 Specs and Replacement

Type Designator: IRF1324

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 353 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 3440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO220AB

IRF1324 substitution

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IRF1324 datasheet

 ..1. Size:451K  international rectifier
irf1324pbf.pdf pdf_icon

IRF1324

PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.2m l Uninterruptible Power Supply l High Speed Power Switching max. 1.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 353A ID (Package Limited) S 195A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ... See More ⇒

 ..2. Size:246K  inchange semiconductor
irf1324.pdf pdf_icon

IRF1324

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1324 IIRF1324 FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM ... See More ⇒

 0.1. Size:472K  international rectifier
auirf1324strl.pdf pdf_icon

IRF1324

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua... See More ⇒

 0.2. Size:281K  international rectifier
irf1324s-7ppbf.pdf pdf_icon

IRF1324

PD - 97263B IRF1324S-7PPbF HEXFET Power MOSFET D Applications VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 0.8m l Uninterruptible Power Supply max. 1.0m l High Speed Power Switching G ID (Silicon Limited) 429A l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D ... See More ⇒

Detailed specifications: IRF1010Z, IRF1010ZL, IRF1010ZS, IRF1018E, IRF1018ES, IRF1018ESL, IRF1104L, IRF1104S, IRF640N, IRF1324L, IRF1324S, IRF1324S-7P, IRF1404L, IRF1404S, IRF1404Z, IRF1404ZG, IRF1404ZL

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