IRF1324L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF1324L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 340 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 160 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 3440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00165 Ohm
   Paquete / Cubierta: TO262

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IRF1324L Datasheet (PDF)

..1. Size:521K international rectifier
irf1324lpbf irf1324spbf.pdf

PD - 97353AIRF1324SPbFIRF1324LPbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.65ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 340AID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynami

0.1. Size:461K infineon
auirf1324s auirf1324l.pdf

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

7.1. Size:472K international rectifier
auirf1324strl.pdf

PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua

7.2. Size:281K international rectifier
irf1324s-7ppbf.pdf

PD - 97263BIRF1324S-7PPbFHEXFET Power MOSFETDApplicationsVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.0.8ml Uninterruptible Power Supply max. 1.0ml High Speed Power Switching GID (Silicon Limited)429Al Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

7.3. Size:451K international rectifier
irf1324pbf.pdf

PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

7.4. Size:655K infineon
auirf1324s-7p.pdf

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

7.5. Size:451K infineon
irf1324pbf.pdf

7.6. Size:240K infineon
auirf1324wl.pdf

PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,

7.7. Size:432K infineon
auirf1324.pdf

PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe

7.8. Size:246K inchange semiconductor
irf1324.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1324IIRF1324FEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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