IRF1324L - Даташиты. Аналоги. Основные параметры

PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.3m l Uninterruptible Power Supply l High Speed Power Switching max. 1.65m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 340A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynami

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175 C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

PD - 97263B IRF1324S-7PPbF HEXFET Power MOSFET D Applications VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 0.8m l Uninterruptible Power Supply max. 1.0m l High Speed Power Switching G ID (Silicon Limited) 429A l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D

PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.2m l Uninterruptible Power Supply l High Speed Power Switching max. 1.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 353A ID (Package Limited) S 195A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

PD - 97676A AUTOMOTIVE GRADE AUIRF1324WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 24V l Ultra Low On-Resistance RDS(on) typ. 1.16m l 50% Lower Lead Resistance max. 1.30m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 382A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free,

PD - 97482 AUTOMOTIVE GRADE AUIRF1324 HEXFET Power MOSFET Features D VDSS 24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 1.2m 175 C Operating Temperature max. 1.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 353A Lead-Free, RoHS Compliant S ID (Package Limited) 195A Automotive Qualified * Description Spe

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175 C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1324 IIRF1324 FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM