IRF1405ZS-7P Todos los transistores

 

IRF1405ZS-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF1405ZS-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 230 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 150 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 150 nC
   Tiempo de subida (tr): 140 nS
   Conductancia de drenaje-sustrato (Cd): 1310 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0049 Ohm
   Paquete / Cubierta: TO263-7

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IRF1405ZS-7P Datasheet (PDF)

 ..1. Size:319K  international rectifier
irf1405zl-7ppbf irf1405zs-7ppbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro

 0.1. Size:247K  international rectifier
auirf1405zs-7p.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 0.2. Size:247K  infineon
auirf1405zs-7p.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 5.1. Size:313K  international rectifier
auirf1405zstrl.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for

 5.2. Size:396K  international rectifier
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 5.3. Size:345K  infineon
auirf1405zs auirf1405zl.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

 5.4. Size:396K  infineon
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 5.5. Size:258K  inchange semiconductor
irf1405zs.pdf

IRF1405ZS-7P
IRF1405ZS-7P

Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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