Справочник MOSFET. IRF1405ZS-7P

 

IRF1405ZS-7P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF1405ZS-7P
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 230 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 150 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 150 nC
   Время нарастания (tr): 140 ns
   Выходная емкость (Cd): 1310 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0049 Ohm
   Тип корпуса: TO263-7

 Аналог (замена) для IRF1405ZS-7P

 

 

IRF1405ZS-7P Datasheet (PDF)

 ..1. Size:319K  international rectifier
irf1405zl-7ppbf irf1405zs-7ppbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro

 0.1. Size:247K  international rectifier
auirf1405zs-7p.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 0.2. Size:247K  infineon
auirf1405zs-7p.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 5.1. Size:313K  international rectifier
auirf1405zstrl.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for

 5.2. Size:396K  international rectifier
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 5.3. Size:345K  infineon
auirf1405zs auirf1405zl.pdf

IRF1405ZS-7P
IRF1405ZS-7P

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

 5.4. Size:396K  infineon
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf

IRF1405ZS-7P
IRF1405ZS-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 5.5. Size:258K  inchange semiconductor
irf1405zs.pdf

IRF1405ZS-7P
IRF1405ZS-7P

Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Другие MOSFET... IRF1404ZS , IRF1405 , IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRFP260 , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 .

 

 
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