IRF1503 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1503
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 240 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 2250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF1503 MOSFET
IRF1503 datasheet
irf1503.pdf
PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Features Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Speci
irf1503pbf.pdf
PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3m G 175 C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to
irf1503.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503 IIRF1503 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide v
irf1503lpbf irf1503spbf.pdf
PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3m G l 175 C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes th
Otros transistores... IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRLB4132 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L .
History: IXFA110N15T2
History: IXFA110N15T2
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