All MOSFET. IRF1503 Datasheet

 

IRF1503 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1503

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 240 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 2250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm

Package: TO220AB

IRF1503 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1503 Datasheet (PDF)

 ..1. Size:268K  international rectifier
 irf1503pbf.pdf

IRF1503 IRF1503

PD-95438AIRF1503PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VFeatures Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.3mG 175C Operating Temperature Fast SwitchingID = 75A Repetitive Avalanche Allowed up to TjmaxSDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing techniques to

 ..2. Size:552K  international rectifier
 irf1503.pdf

IRF1503 IRF1503

PD-94526AAUTOMOTIVE MOSFETIRF1503Typical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VFeatures Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpeci

 ..3. Size:245K  inchange semiconductor
 irf1503.pdf

IRF1503 IRF1503

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503 IIRF1503FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide v

 0.1. Size:330K  international rectifier
 irf1503lpbf irf1503spbf.pdf

IRF1503 IRF1503

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

 0.2. Size:661K  international rectifier
 irf1503l irf1503s.pdf

IRF1503 IRF1503

PD - 94494AIRF1503SIRF1503LTypical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VBenefits Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpecificall

 0.3. Size:203K  inchange semiconductor
 irf1503s.pdf

IRF1503 IRF1503

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

Datasheet: IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRFP260 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L .

 

 
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