IRF1607 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1607
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 380 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 142 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 1230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF1607 MOSFET
IRF1607 PDF Specs
irf1607pbf.pdf
PD -95487A IRF1607PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 142A S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastes... See More ⇒
irf1607.pdf
PD -94158 AUTOMOTIVE MOSFET IRF1607 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Electrical Power Steering (EPS) VDSS = 75V Integrated Starter Alternator Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 142AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax A... See More ⇒
irf1607.pdf
isc N-Channel MOSFET Transistor IRF1607 IIRF1607 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
smirf16n65.pdf
SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒
Otros transistores... IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , K3569 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P .
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