IRF1607 Todos los transistores

 

IRF1607 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF1607
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 380 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 142 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 210 nC
   Tiempo de subida (tr): 130 nS
   Conductancia de drenaje-sustrato (Cd): 1230 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
   Paquete / Cubierta: TO220AB

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IRF1607 Datasheet (PDF)

 ..1. Size:256K  international rectifier
irf1607pbf.pdf

IRF1607
IRF1607

PD -95487AIRF1607PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 142AS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes the lastes

 ..2. Size:234K  international rectifier
irf1607.pdf

IRF1607
IRF1607

PD -94158AUTOMOTIVE MOSFETIRF1607Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsD Electrical Power Steering (EPS)VDSS = 75V Integrated Starter AlternatorBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating TemperatureID = 142AV Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax A

 ..3. Size:245K  inchange semiconductor
irf1607.pdf

IRF1607
IRF1607

isc N-Channel MOSFET Transistor IRF1607IIRF1607FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.1. Size:1604K  cn sps
smirf16n65.pdf

IRF1607
IRF1607

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

Otros transistores... IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , 2N7000 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P .

 

 
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