IRF1607 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1607
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 380 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 142 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 210 nC
Tiempo de subida (tr): 130 nS
Conductancia de drenaje-sustrato (Cd): 1230 pF
Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
Paquete / Cubierta: TO220AB
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IRF1607 Datasheet (PDF)
irf1607pbf.pdf
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PD -95487AIRF1607PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 142AS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes the lastes
irf1607.pdf
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PD -94158AUTOMOTIVE MOSFETIRF1607Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsD Electrical Power Steering (EPS)VDSS = 75V Integrated Starter AlternatorBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating TemperatureID = 142AV Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax A
irf1607.pdf
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isc N-Channel MOSFET Transistor IRF1607IIRF1607FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
smirf16n65.pdf
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SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![IRF1607](https://alltransistors.com/images/us.png)
![IRF1607](https://alltransistors.com/images/es.png)
![IRF1607](https://alltransistors.com/images/ru.png)
Liste
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