All MOSFET. IRF1607 Datasheet


IRF1607 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF1607
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 380 W
   Maximum Drain-Source Voltage |Vds|: 75 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 142 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 210 nC
   Rise Time (tr): 130 nS
   Drain-Source Capacitance (Cd): 1230 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
   Package: TO220AB

 IRF1607 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF1607 Datasheet (PDF)

 ..1. Size:234K  international rectifier


PD -94158AUTOMOTIVE MOSFETIRF1607Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsD Electrical Power Steering (EPS)VDSS = 75V Integrated Starter AlternatorBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating TemperatureID = 142AV Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax A

 ..2. Size:256K  international rectifier


PD -95487AIRF1607PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 142AS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes the lastes

 ..3. Size:245K  inchange semiconductor


isc N-Channel MOSFET Transistor IRF1607IIRF1607FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.1. Size:1604K  cn sps


SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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