IRF2805 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF2805
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 150 nC
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 1190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRF2805

IRF2805 Datasheet (PDF)

..1. Size:151K international rectifier
irf2805.pdf

PD - 94428IRF2805AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsDl Climate Control, ABS, Electronic Braking,VDSS = 55V Windshield WipersFeaturesRDS(on) = 4.7mGl Advanced Process Technologyl Ultra Low On-ResistanceID = 75Al 175C Operating TemperatureSl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxDescriptionSpecifically designed

..2. Size:264K international rectifier
irf2805pbf.pdf

PD - 95493AIRF2805PbFHEXFET Power MOSFETTypical Applicationsl Industrial Motor DriveDVDSS = 55VFeaturesl Advanced Process TechnologyRDS(on) = 4.7mGl Ultra Low On-Resistancel 175C Operating TemperatureID = 75Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the latest processingtech

..3. Size:264K infineon
irf2805pbf.pdf

..4. Size:245K inchange semiconductor
irf2805.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2805IIRF2805FEATURESStatic drain-source on-resistance:RDS(on) 4.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.1. Size:270K international rectifier
auirf2805l auirf2805s.pdf

PD - 96383AAUTOMOTIVE GRADEAUIRF2805SAUIRF2805LHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.4.7m 175C Operating TemperatureG Fast Switching Fully Avalanche RatedS ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSp

0.2. Size:229K international rectifier
auirf2805.pdf

PD - 97690AAUTOMOTIVE GRADEAUIRF2805Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel 175C Operating TemperatureDV(BR)DSS55Vl Fast SwitchingRDS(on) typ.3.9ml Fully Avalanche Ratedmax 4.7ml Repetitive Avalanche AllowedGup to TjmaxID (Silicon Limited)175Al Lead-Free, RoHS CompliantSID (Package Limited)75Al Autom

0.3. Size:331K international rectifier
irf2805lpbf irf2805spbf.pdf

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates

0.4. Size:331K infineon
irf2805spbf irf2805lpbf.pdf

0.5. Size:252K inchange semiconductor
irf2805s.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2805SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

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