IRF2805 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF2805
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRF2805 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF2805 datasheet
irf2805.pdf
PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175 C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed
irf2805pbf.pdf
PD - 95493A IRF2805PbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Features l Advanced Process Technology RDS(on) = 4.7m G l Ultra Low On-Resistance l 175 C Operating Temperature ID = 75A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing tech
irf2805.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805 IIRF2805 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
irf2805spbf irf2805lpbf.pdf
PD - 95944A IRF2805SPbF IRF2805LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 4.7m l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 135A S l Lead-Free Description This HEXFET Power MOSFET utilizes the lates
Otros transistores... IRF1902, IRF2204, IRF2204L, IRF2204S, IRF2804, IRF2804L, IRF2804S, IRF2804S-7P, 5N65, IRF2805L, IRF2805S, IRF2807Z, IRF2807ZL, IRF2807ZS, IRF2903Z, IRF2903ZL, IRF2903ZS
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