IRF2805 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF2805
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 150 nC
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF2805 MOSFET
IRF2805 Datasheet (PDF)
irf2805.pdf

PD - 94428IRF2805AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsDl Climate Control, ABS, Electronic Braking,VDSS = 55V Windshield WipersFeaturesRDS(on) = 4.7mGl Advanced Process Technologyl Ultra Low On-ResistanceID = 75Al 175C Operating TemperatureSl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxDescriptionSpecifically designed
irf2805pbf.pdf

PD - 95493AIRF2805PbFHEXFET Power MOSFETTypical Applicationsl Industrial Motor DriveDVDSS = 55VFeaturesl Advanced Process TechnologyRDS(on) = 4.7mGl Ultra Low On-Resistancel 175C Operating TemperatureID = 75Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the latest processingtech
irf2805.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2805IIRF2805FEATURESStatic drain-source on-resistance:RDS(on) 4.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
irf2805spbf irf2805lpbf.pdf

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates
Otros transistores... IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , 4435 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL , IRF2903ZS .
History: BUK7Y28-75B | MDU1722VRH
History: BUK7Y28-75B | MDU1722VRH



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