All MOSFET. IRF2805 Datasheet

 

IRF2805 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2805

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 175 A

Maximum Drain-Source On-State Resistance (Rds): 0.0047 Ohm

Package: TO220AB

IRF2805 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF2805 Datasheet (PDF)

1.1. irf2805.pdf Size:151K _international_rectifier

IRF2805
IRF2805

PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m? G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175°C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Aut

4.1. irf2807.pdf Size:207K _international_rectifier

IRF2805
IRF2805

PD - 91517 IRF2807 HEXFET® Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

4.2. irf2807s.pdf Size:124K _international_rectifier

IRF2805
IRF2805

PD - 94170 IRF2807S IRF2807L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

4.3. irf2807z.pdf Size:173K _international_rectifier

IRF2805
IRF2805

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest

4.4. irf2804.pdf Size:569K _international_rectifier

IRF2805
IRF2805

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 2.3m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techni

Datasheet: IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , BF245A , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL , IRF2903ZS .

 


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