IRF2807ZL Todos los transistores

 ..1. Size:399K  international rectifier
 irf2807zpbf irf2807zspbf irf2807zlpbf.pdf

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni

 ..2. Size:399K  international rectifier
 irf2807zlpbf irf2807zpbf irf2807zspbf.pdf

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni

 ..3. Size:256K  inchange semiconductor
 irf2807zl.pdf

Isc N-Channel MOSFET Transistor IRF2807ZL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75

 6.1. Size:173K  international rectifier
 irf2807z.pdf

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th

 6.2. Size:258K  inchange semiconductor
 irf2807zs.pdf

Isc N-Channel MOSFET Transistor IRF2807ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 6.3. Size:246K  inchange semiconductor
 irf2807z.pdf

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSO