IRF2807ZL - описание и поиск аналогов

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni

Isc N-Channel MOSFET Transistor IRF2807ZL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th

Isc N-Channel MOSFET Transistor IRF2807ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSO