IRF3205Z Todos los transistores

 ..1. Size:379K  international rectifier
 irf3205zpbf irf3205zlpbf irf3205zspbf.pdf

PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m l Lead-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 ..2. Size:303K  international rectifier
 irf3205z irf3205zs irf3205zl.pdf

PD - 94653B IRF3205Z AUTOMOTIVE MOSFET IRF3205ZS IRF3205ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m G Description ID = 75A Specifically designed for Automotive applications, S this HEXFET Power MOS

 ..3. Size:181K  international rectifier
 irf3205z.pdf

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 6.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 ..4. Size:379K  international rectifier
 irf3205zpbf irf3205zspbf irf3205zlpbf.pdf

PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m l Lead-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 ..5. Size:246K  inchange semiconductor
 irf3205z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205Z IIRF3205Z FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 0.1. Size:330K  international rectifier
 auirf3205zstrl.pdf

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching RDS(on) max. 6.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Li

 0.2. Size:707K  infineon
 auirf3205z auirf3205zs.pdf

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175 C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

 0.3. Size:258K  inchange semiconductor
 irf3205zs.pdf

Isc N-Channel MOSFET Transistor IRF3205ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol